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1. product pro?le 1.1 general description low capacitance bidirectional double electrostatic discharge (esd) protection diode in a small sot23 (to-236ab) surface-mounted device (smd) plastic package designed to protect two data lines from the damage caused by esd and other transients. 1.2 features n bidirectional esd protection of two lines n low diode capacitance n max. peak pulse power: p pp = 130 w at t p = 8/20 m s n low clamping voltage: v cl = 14 v at i pp =12a n ultra low leakage current: i rm = 5 na at v rwm =5v n esd protection up to 30 kv n iec 61000-4-2; level 4 (esd) n iec 61000-4-5 (surge); i pp = 12 a at t p = 8/20 m s 1.3 applications n cellular handsets and accessories n portable electronics n computers and peripherals n communication systems n audio and video equipment 1.4 quick reference data PESD5V0S2BT low capacitance bidirectional double esd protection diode rev. 03 9 february 2009 product data sheet table 1. quick reference data t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v rwm reverse standoff voltage - - 5 v c d diode capacitance f = 1 mhz; v r =0v - 3545pf
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 2 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values [1] non-repetitive current pulse 8/20 m s exponential decay waveform. [2] measured from pin 1 to 3 or pin 2 to 3. table 2. pinning pin description simpli?ed outline graphic symbol 1 cathode 1 2 cathode 2 3 double cathode 12 3 1 2 3 sym031 table 3. ordering information type number package name description version PESD5V0S2BT - plastic surface-mounted package; 3 leads sot23 table 4. marking type number marking code [1] PESD5V0S2BT *g5 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p pp peak pulse power t p = 8/20 m s [1] [2] - 130 w i pp peak pulse current t p = 8/20 m s [1] [2] -12a t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 3 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 1 to 3 or pin 2 to 3. table 6. esd maximum ratings symbol parameter conditions min max unit v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] -30kv mil-std-883 (human body model) -10kv table 7. esd standards compliance standard conditions iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3 (human body model) > 4 kv fig 1. 8/20 m s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( m s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e - t 100 % i pp ; 8 m s 50 % i pp ; 20 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 4 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 6. characteristics [1] non-repetitive current pulse 8/20 m s exponential decay waveform. [2] measured from pin 1 to 3 or pin 2 to 3. table 8. electrical characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage - - 5 v i rm reverse leakage current v rwm = 5 v - 5 100 na v cl clamping voltage i pp =1a [1] [2] --10v i pp =12a [1] [2] --14v v br breakdown voltage i r = 1 ma 5.5 - 9.5 v r dif differential resistance i r =1ma --50 w c d diode capacitance f = 1 mhz; v r =0v - 3545pf t amb =25 c t p = 8/20 m s exponential decay waveform fig 3. peak pulse power dissipation as a function of pulse duration; typical values fig 4. relative variation of peak pulse power as a function of junction temperature; typical values 001aaa632 t p ( m s) 110 4 10 3 10 10 2 10 2 10 3 p pp (w) 10 t j ( c) 0 200 150 50 100 001aaa633 0.4 0.8 1.2 p pp 0 p pp(25 c)
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 5 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode t amb =25 c; f = 1 mhz i r < 1 na measured at t amb =25 c fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. relative variation of reverse current as a function of junction temperature; typical values v r (v) 05 4 23 1 001aaa634 30 26 34 38 c d (pf) 22 001aaa635 t j ( c) 75 150 125 100 10 1 10 2 10 - 1 i r i r(85 c)
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 6 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode fig 7. esd clamping test setup and waveforms coa006 50 w r z c z PESD5V0S2BT vertical scale = 200 v/div horizontal scale = 50 ns/div unclamped + 1 kv esd voltage waveform (iec61000-4-2 network) clamped + 1 kv esd voltage waveform (iec61000-4-2 network) unclamped - 1 kv esd voltage waveform (iec61000-4-2 network) clamped - 1 kv esd voltage waveform (iec61000-4-2 network) vertical scale = 10 v/div horizontal scale = 50 ns/div vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 10 v/div horizontal scale = 50 ns/div gnd gnd gnd gnd 450 w rg 223/u 50 w coax esd tester iec 61000-4-2 network c z = 150 pf; r z = 330 w 4 ghz digital oscilloscope 10 attenuator
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 7 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 7. application information the PESD5V0S2BT is designed for the bidirectional protection of two lines from the damage caused by electrostatic discharge (esd) and surge pulses. the PESD5V0S2BT may be used on lines where the signal polarities are both, positive and negative with respect to ground. the PESD5V0S2BT provides a surge capability of 130 w per line for an 8/20 m s waveform. circuit board layout and protection device placement: circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the PESD5V0S2BT as close to the input terminal or connector as possible. 2. the path length between the PESD5V0S2BT and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. fig 8. typical application for bidirectional protection of two lines 001aaa636 PESD5V0S2BT gnd line 2 to be protected line 1 to be protected
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 8 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 13 . fig 9. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PESD5V0S2BT sot23 4 mm pitch, 8 mm tape and reel -215 -235
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 9 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 10. soldering fig 10. re?ow soldering footprint sot23 (to-236ab) fig 11. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 10 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 11. revision history table 10. revision history document id release date data sheet status change notice supersedes PESD5V0S2BT_3 20090209 product data sheet - PESD5V0S2BT_2 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? t ab le 6 : esd electro static discharge capability rede?ned to v esd electrostatic discharge voltage ? t ab le 8 : v (cl)r clamping voltage rede?ned to v cl ? figure 4 : ?gure notes removed ? section 7 application inf or mation : updated ? figure 9 : superseded by minimized package outline drawing ? section 9 p ac king inf or mation : added ? section 10 solder ing : added ? section 12 legal inf or mation : updated PESD5V0S2BT_2 20040527 product data sheet - PESD5V0S2BT_1 PESD5V0S2BT_1 20040517 product data sheet - -
PESD5V0S2BT_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 9 february 2009 11 of 12 nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PESD5V0S2BT low capacitance bidirectional double esd protection diode ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 9 february 2009 document identifier: PESD5V0S2BT_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 7 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 packing information. . . . . . . . . . . . . . . . . . . . . . 8 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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